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Doping in III-V Semiconductors

Name: Doping in III-V Semiconductors
Brand: Cambridge University Press
SKU: 04089657
Price: 128.99 EUR
Availability: InStock
Author: E.Fred Schubert
ISBN: 9780521017848

E.Fred Schubert

Jezik

Angleščina

Knjiga Mehka

Koda Libristo: 04089657

Založba Cambridge University Press, avgust 2005

This is the first book to describe thoroughly the many facets of doping in compound semiconductors.... Celoten opis

Koda Libristo: 04089657

312 b

128.99 €

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This is the first book to describe thoroughly the many facets of doping in compound semiconductors. Equal emphasis is given to the fundamental materials physics and to the technological aspects of doping. The author describes in detail all the various techniques, including doping during epitaxial growth, doping by implantation, and doping by diffusion. The key characteristics of all dopants that have been employed in III–V semiconductors are discussed. In addition, general characteristics of dopants are analyzed, including the electrical activity, saturation, amphotericity, auto-compensation and maximum attainable dopant concentration. The timely topic of highly doped semiconductors is discussed as well. Technologically important deep levels are summarized. The properties of deep levels are presented phenomenologically. The final chapter is dedicated to the experimental characterization of impurities.