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Advanced Packaging for Microelectronic and Microsystem Applications
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The emergence of GaN-based devices promises a§revolution in areas requiring high performance§electronics, such as high speed earth and space-based§communication systems, advanced radar, integrated§sensors, high temperature electronics, and utility§power switching. The properties of this system make§it ideally suited for operation at elevated§temperatures and at voltage and current levels well§beyond that accessible by Si. Recent improvements in§material quality and device performance are rapidly§opening the door to commercialization, and III-N§technologies are demonstrating exciting developments§of late. Though devices are entering§commercialization, there are still considerable§unknowns, particularly in the reliability field.§Recent advances at the University of Florida will be§detailed in this work.
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